Semiconductor structure

ABSTRACT

A semiconductor structure is provided. The semiconductor structure includes a substrate, at least one semiconductor device, a through-substrate via (TSV), and a shield structure. The substrate has a front side surface and a back side surface. The semiconductor device is disposed on the front side surface. The TSV is disposed in the substrate. The TSV is exposed by the front side surface and the back side surface, and the TSV is electrically connected to the semiconductor device. The shield structure is disposed in the substrate and surrounds the TSV. The shield structure is exposed by the front side surface, the shield structure is electrically isolated from the TSV, and the shield structure is used to be electrically connected to a power terminal or a ground terminal.

BACKGROUND Technical Field

The present disclosure relates to a semiconductor structure.

Description of Related Art

With the rapid growth of electronic industry, the R & D of electronicproducts is gradually directed to the pursuit of versatile and highperformance. In order to achieve the requirements of high integrationand miniaturization of semiconductor components, the requirements of thepackage structure also increase.

To further improve various characteristics of a package structure,persons in the industry all endeavor to search the solutions. How toprovide a package structure with better characteristics is one of theimportant research topics, and is also a target that needs to beimproved in the related fields.

SUMMARY

This disclosure provides a semiconductor structure to prevent crosstalkbetween the currents in the TSVs.

In one aspect of the disclosure, a semiconductor structure is provided.The semiconductor structure includes a substrate, at least onesemiconductor device, a through-substrate via (TSV), and a shieldstructure. The substrate has a front side surface and a back sidesurface. The semiconductor device is disposed on the front side surface.The TSV is disposed in the substrate. The TSV is exposed by the frontside surface and the back side surface, and the TSV is electricallyconnected to the semiconductor device. The shield structure is disposedin the substrate and surrounds the TSV. The shield structure is exposedby the front side surface, and the shield structure is electricallyisolated from the TSV. The shield structure is used to be electricallyconnected to a power terminal or a ground terminal.

In one or more embodiments, the semiconductor structure further includesa first dielectric layer, a first circuit layer, and a second circuitlayer. The first dielectric layer is disposed on the front side surface.The first circuit layer is disposed in the first dielectric layer, andthe first circuit layer is electrically connected to the TSV. The secondcircuit layer is disposed in the first dielectric layer, and the secondcircuit layer is electrically connected to the shield structure.

In one or more embodiments, the semiconductor structure further includesa first pad and a second pad. The first pad is electrically connected tothe first circuit layer, and the first pad is used to be electricallyconnected to a signal terminal. The second pad is electrically connectedto the second circuit layer, and the second pad is used to beelectrically connected to the power terminal or the ground terminal.

In one or more embodiments, the first dielectric layer, the firstcircuit layer, the second circuit layer, and the semiconductor deviceform a first redistribution layer.

In one or more embodiments, a line pitch of the first circuit layer isless than 0.2 μm.

In one or more embodiments, the shield structure has a connectingportion electrically connecting the second circuit layer.

In one or more embodiments, the shield structure has a plurality ofconnecting portions electrically connecting the second circuit layer.

In one or more embodiments, a plurality of the TSVs are disposed in thesubstrate.

In one or more embodiments, the shield structure is exposed by the backside surface.

In one or more embodiments, the shield structure is covered by the backside surface.

In one or more embodiments, a height of the TSV is greater than a heightof the shield structure.

In one or more embodiments, a height of the TSV approximately equals aheight of the shield structure.

In one or more embodiments, the shield structure is a metal layer.

In one or more embodiments, the semiconductor structure further includesa second redistribution layer disposed on the back side surface andelectrically connected to the TSV.

In one or more embodiments, the semiconductor structure further includesa bump disposed on a side of the second redistribution layer opposite tothe substrate.

In one or more embodiments, the second redistribution layer includes asecond dielectric layer and a third circuit layer. The third circuitlayer is disposed in the second dielectric layer and electricallyconnected to the TSV, in which a line pitch of the third circuit layeris greater than 1 μm.

In one or more embodiments, the substrate is substantially absentbetween the TSV and the shield structure.

In one or more embodiments, a part of the substrate is disposed betweenthe TSV and the shield structure.

In one or more embodiments, the TSV is made of copper.

In one or more embodiments, the TSV and the shield structure is made ofthe same material.

Because the distances between the TSVs are not very large, somecrosstalk between the currents in the TSVs may happen. In order toprevent the crosstalk between the currents in the TSVs, the shieldstructure surrounds the TSV, such that the shielding effect will protectthe currents in the TSVs from being influenced by the electric fieldsand the magnetic fields generated by other currents in the TSVs.

Further, because the shield structure will be electrically connected toa power terminal or a ground terminal, the voltage of the shieldstructure can maintain unchanged (in most case, the voltage will bezero). Therefore, the shield structure can effectively perform theshielding effect.

It is to be understood that both the foregoing general description andthe following detailed description are by examples, and are intended toprovide further explanation of the disclosure as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure can be more fully understood by reading the followingdetailed description of the embodiment, with reference made to theaccompanying drawings as follows:

FIG. 1 is a schematic cross-sectional view of a semiconductor structureaccording to one embodiment of this disclosure;

FIG. 2 is a schematic top view of the semiconductor structure accordingto one embodiment of this disclosure;

FIG. 3 is a schematic cross-sectional view of the semiconductorstructure according to another embodiment of this disclosure;

FIG. 4 is a schematic cross-sectional view of the semiconductorstructure according to another embodiment of this disclosure;

FIG. 5 is a schematic top view of the semiconductor structure accordingto another embodiment of this disclosure;

FIG. 6 is a schematic cross-sectional view of the semiconductorstructure according to another embodiment of this disclosure;

FIGS. 7 to 12 are schematic cross-sectional views of intermediate stepsin processes for manufacturing the semiconductor structure according toone embodiment of this disclosure; and

FIGS. 13 to 18 are schematic cross-sectional views of intermediate stepsin processes for manufacturing the semiconductor structure according toanother embodiment of this disclosure.

DETAILED DESCRIPTION

In the following detailed description, for purposes of explanation,numerous specific details are set forth in order to provide a thoroughunderstanding of the disclosed embodiments. It will be apparent,however, that one or more embodiments may be practiced without thesespecific details. In other instances, well-known structures and devicesare schematically depicted in order to simplify the drawings.

FIG. 1 is a schematic cross-sectional view of a semiconductor structure100 according to one embodiment of this disclosure. FIG. 2 is aschematic top view of the semiconductor structure 100 according to oneembodiment of this disclosure. FIG. 1 is the cross-sectional view viewedalong line 1-1 of FIG. 2. As shown in FIG. 1 and FIG. 2, a semiconductorstructure 100 is provided. In some embodiments, the semiconductorstructure 100 may be applied to a dynamic random access memory device(DRAM). The semiconductor structure 100 may be manufactured inwafer-level or panel-level processes.

The semiconductor structure 100 includes a substrate 110, at least onesemiconductor device 120, at least one through-substrate via (TSV) 130,and at least one shield structure 140. The substrate 110 has a frontside surface 110 f and a back side surface 110 b. The semiconductordevice 120 is disposed on the front side surface 110 f. The TSV 130 isdisposed in the substrate 110. The TSV 130 is exposed by the front sidesurface 110 f and the back side surface 110 b, and the TSV 130 iselectrically connected to the semiconductor device 120. The shieldstructure 140 is disposed in the substrate 110 and surrounds the TSV130. The shield structure 140 is exposed by the front side surface 110f, and the shield structure 140 is electrically isolated from the TSV130. The shield structure 140 is used to be electrically connected to apower terminal or a ground terminal.

Specifically, a plurality of the TSVs 130 are disposed in the substrate110. Because the distances between the TSVs 130 are not very large, somecrosstalk between the currents in the TSVs 130 may happen. In order toprevent the crosstalk between the currents in the TSVs 130, the shieldstructure 140 surrounds the TSV 130, such that the shielding effect willprotect the currents in the TSVs 130 from being influenced by theelectric fields and the magnetic fields generated by other currents inthe TSVs 130.

Further, because the shield structure 140 will be electrically connectedto a power terminal or a ground terminal, the voltage of the shieldstructure 140 can maintain unchanged (in most case, the voltage will bezero). Therefore, the shield structure 140 can effectively perform theshielding effect.

The substrate 110 may be composed of a single crystalline semiconductormaterial or a polycrystalline semiconductor material contiguouslyextending from the front side surface 110 f to the back side surface 110b.

The semiconductor device 120 can be, for example, a field effecttransistor, a bipolar transistor, a thyristor, a varactor, a diode, anelectrical fuse, or any other type of semiconductor device known in theart.

The shield structure 140 may be a metal layer. In some embodiments, theshield structure 140 is made of copper. Embodiments of this disclosureare not limited thereto. The person having ordinary skill in the art canmake proper modifications to the shield structure 140 depending on theactual application.

The TSV 130 and the shield structure 140 may be made of the samematerial. In some embodiments, the TSV 130 is made of copper.Embodiments of this disclosure are not limited thereto. The personhaving ordinary skill in the art can make proper modifications to theTSV 130 depending on the actual application.

The semiconductor structure 100 further includes a dielectric layer 150,at least one circuit layer 161, and at least one circuit layer 162. Thedielectric layer 150 is disposed on the front side surface 110 f. Thecircuit layer 161 is disposed in the dielectric layer 150, and thecircuit layer 161 is electrically connected to the TSV 130. The circuitlayer 162 is disposed in the dielectric layer 150, and the circuit layer162 is electrically connected to the shield structure 140.

The semiconductor structure 100 further includes at least one pad 171and at least one pad 172. The pad 171 is electrically connected to thecircuit layer 161, and the pad 171 is used to be electrically connectedto a signal terminal. The pad 172 is electrically connected to thecircuit layer 162, and the pad 162 is used to be electrically connectedto the power terminal or the ground terminal.

Therefore, the dielectric layer 150, the circuit layer 161, the circuitlayer 162, the semiconductor device 120, the pad 171, and the pad 172form a first redistribution layer.

Because the pad 171 will be electrically connected the signal terminal,and the pad 171 is electrically connected the circuit layer 161 and thesemiconductor device 120, the signal from the signal terminal can betransformed into a different kind of signal by the semiconductor device120, and then the transformed signal can pass the TSV 130.

The shield structure 140 may have a plurality of connecting portions 140c electrically connecting the circuit layer 162. In this embodiment, theshield structure 140 has two connecting portions 140 c electricallyconnecting the circuit layer 162. Embodiments of this disclosure are notlimited thereto. In some other embodiments, the shield structure 140 mayhave a connecting portion electrically connecting the circuit layer 162.

When the shield structure 140 has a plurality of connecting portions 140c electrically connecting the circuit layer 162, the electrons in theshield structure 140 can enter and exit faster through differentconnecting portions 140 c, such that the shielding effect can beperformed more effectively by the shield structure 140.

The line pitch of the circuit layer 161 is less than 0.2 μm. Embodimentsof this disclosure are not limited thereto. In some other embodiments,the person having ordinary skill in the art can make propermodifications to the circuit layer 161 depending on the actualapplication.

The semiconductor structure 100 further includes a dielectric layer 181surrounding the TSV 130, and the dielectric layer 181 is disposedbetween the TSV 130 and the shield structure 140, such that the shieldstructure 140 is electrically isolated from the TSV 130.

Further, the substrate 110 is substantially absent between the TSV 130and the shield structure 140.

The semiconductor structure 100 further includes a dielectric layer 182surrounding the shield structure 140, and the dielectric layer 182 isdisposed between the substrate 110 and the shield structure 140.

The dielectric layer 181 may be made of silicon oxide, silicon dioxide,and silicon oxynitride, and the dielectric layer 182 may be made ofsilicon oxide, silicon dioxide, and silicon oxynitride. Embodiments ofthis disclosure are not limited thereto. The person having ordinaryskill in the art can make proper modifications to the material of thedielectric layer 181 and the dielectric layer 182 depending on theactual application.

In this embodiment, the shield structure 140 is covered by the back sidesurface 110 b, and the height of the TSV 130 is greater than the heightof the shield structure 140. Embodiments of this disclosure are notlimited thereto.

Because the shield structure 140 is covered by the back side surface 110b, the situation that the shield structure 140 is accidentallyelectrically connected to some circuit outside the back side surface 110b can be prevented. Therefore, the voltage of the shield structure 140will be more stable.

FIG. 3 is a schematic cross-sectional view of the semiconductorstructure 100 according to another embodiment of this disclosure. Asshown in FIG. 3, the semiconductor structure 100 of this embodiment issimilar to the semiconductor structure 100 of FIG. 1, and the maindifference is that, in this embodiment, the shield structure 140 isexposed by the back side surface 110 b. Therefore, the height of the TSV130 approximately equals the height of the shield structure 140.

FIG. 4 is a schematic cross-sectional view of the semiconductorstructure 100 according to another embodiment of this disclosure. FIG. 5is a schematic top view of the semiconductor structure 100 according toanother embodiment of this disclosure. FIG. 4 is the cross-sectionalview viewed along line 4-4 of FIG. 5. As shown in FIG. 4 and FIG. 5, thesemiconductor structure 100 of this embodiment is similar to thesemiconductor structure 100 of FIG. 1 and FIG. 2, and the maindifferences are described below.

The dielectric layer 182 is further disposed between the TSV 130 and theshield structure 140, and a part of the substrate 110 is disposedbetween the TSV 130 and the shield structure 140. Specifically, the partof the substrate 110 is disposed between the dielectric layer 181 andthe part of the dielectric layer 182. The part of the dielectric layer182 is disposed between the part of the substrate 110 and the shieldstructure 140.

FIG. 6 is a schematic cross-sectional view of the semiconductorstructure 100 according to another embodiment of this disclosure. Asshown in FIG. 6, the semiconductor structure 100 of this embodiment issimilar to the semiconductor structure 100 of FIG. 4, and the maindifference is that, in this embodiment, the shield structure 140 isexposed by the back side surface 110 b. Therefore, the height of the TSV130 approximately equals the height of the shield structure 140.

FIGS. 7 to 12 are schematic cross-sectional views of intermediate stepsin processes for manufacturing the semiconductor structure 100 accordingto one embodiment of this disclosure. As shown in FIG. 7, a substrate110 is provided. Then, at least one trench 110 t 1 is formed in thesubstrate 110. In some embodiments, the trench 110 t 1 is formed byetching. Then, a dielectric layer 181 is formed on the side surface andthe bottom surface of the trench 110 t 1. Then, at least one TSV 130 isformed in the trench 110 t 1 and on the dielectric layer 181. In someembodiments, the TSV 130 is formed by plating.

As shown in FIG. 8, at least one trench 110 t 2 is formed in thesubstrate 110, and the trench 110 t 2 is formed adjacent to the TSV 130and surrounds the TSV 130. Specifically, the trench 110 t 2 exposes thedielectric layer 181. In some embodiments, the trench 110 t 2 is formedby etching. Then, a dielectric layer 182 is formed on the side surfaceand the bottom surface of the trench 110 t 2. Then, a shield structure140 is formed in the trench 110 t 2 and on the dielectric layer 182. Insome embodiments, the shield structure 140 is formed by plating.

As shown in FIG. 9, at least one semiconductor device 120, at least onecircuit layer 161, at least one circuit layer 162, at least one pad 171,at least one pad 172, and a dielectric layer 150 are respectively formedon the substrate 110, the TSV 130, and the shield structure 140. Inother words, a first redistribution layer, which includes the dielectriclayer 150, the circuit layer 161, the circuit layer 162, thesemiconductor device 120, the pad 171, and the pad 172, is formed.

As shown in FIG. 10, at least one opening 15001 and at least one opening150 o 2 are respectively formed in the dielectric layer 150 to exposethe pad 171 and the pad 172.

As shown in FIG. 11, the back side of the substrate 110 is grinded, suchthat the TSV 130 is exposed by the back side surface 110 b. Thesemiconductor structure 100 may correspond to the semiconductorstructure 100 of FIG. 1.

As shown in FIG. 12, at least one circuit layer 191, a dielectric layer192, and at least one bump 194 are respectively formed on the TSV 130exposed by the back side surface 110 b and the back side surface 110 b.The circuit layer 191 and the dielectric layer 192 form a secondredistribution layer 193. In other words, the second redistributionlayer 193 includes the circuit layer 191 and the dielectric layer 192.The second redistribution layer 193 is disposed on the back side surface110 b and the TSV 130 and electrically connected to the TSV 130. Thebump 194 is disposed on a side of the second redistribution layer 193opposite to the substrate 110.

Specifically, the circuit layer 191 is disposed in the dielectric layer192 and electrically connected to the TSV 130, and the line pitch of thecircuit layer 191 is greater than 1 μm. Embodiments of this disclosureare not limited thereto. The person having ordinary skill in the art canmake proper modifications to the circuit layer 191 depending on theactual application.

In addition, at least one solder ball 195 may be formed on a side of thebump 194 opposite to the second redistribution layer 193.

The pad 171 and the pad 172 are used to be electrically connected to onechip, and the bump 194 or the solder ball 195 is used to be electricallyconnected to another chip.

As shown in FIG. 7 and FIG. 9, in some other embodiments, thesemiconductor device 120 can be formed on the substrate 110 before thetrench 110 t 1 is formed in the substrate 110.

As shown in FIG. 11, in some other embodiments, the back side of thesubstrate 110 may be grinded, such that the shield structure 140 isexposed by the back side surface 110 b as well. Then, some otherelectrical connection structure, which is electrically isolated from theTSV 130, may be formed on the back side surface 110 b to be electricalconnected to the shield structure 140.

FIGS. 13 to 18 are schematic cross-sectional views of intermediate stepsin processes for manufacturing the semiconductor structure 100 accordingto another embodiment of this disclosure. As shown in FIG. 13, asubstrate 110 is provided.

As shown in FIG. 14, at least one trench 110 t 1 and at least one trench110 t 2 are formed in the substrate 110, and the trench 110 t 2 isformed adjacent to the trench 110 t 1 and surrounds the trench 110 t 1.In some embodiments, the trench 110 t 1 and the trench 110 t 2 areformed in one etching process (when the width of the trench is greater,the depth of the trench will automatically become smaller in the etchingprocess). Then, a dielectric layer 181 is formed on the side surface andthe bottom surface of the trench 110 t 1 and the side surface and thebottom surface of the trench 110 t 2. Then, at least one TSV 130 isformed in the trench 110 t 1 and on the dielectric layer 181. In someembodiments, the TSV 130 is formed by plating. Then, a shield structure140 is formed in the trench 110 t 2 and on the dielectric layer 181. Insome embodiments, the shield structure 140 is formed by plating.

As shown in FIG. 15, at least one semiconductor device 120, at least onecircuit layer 161, at least one circuit layer 162, at least one pad 171,at least one pad 172, and a dielectric layer 150 are respectively formedon the substrate 110, the TSV 130, and the shield structure 140. Inother words, a first redistribution layer, which includes the dielectriclayer 150, the circuit layer 161, the circuit layer 162, thesemiconductor device 120, the pad 171, and the pad 172, is formed.

As shown in FIG. 16, at least one opening 15001 and at least one opening150 o 2 are respectively formed in the dielectric layer 150 to exposethe pad 171 and the pad 172.

As shown in FIG. 17, the back side of the substrate 110 is grinded, suchthat the TSV 130 is exposed by the back side surface 110 b. Thesemiconductor structure 100 may correspond to the semiconductorstructure 100 of FIG. 4.

As shown in FIG. 18, at least one circuit layer 191, a dielectric layer192, and at least one bump 194 are respectively formed on the TSV 130exposed by the back side surface 110 b and the back side surface 110 b.The circuit layer 191 and the dielectric layer 192 form the secondredistribution layer 193. In other words, the second redistributionlayer 193 includes the circuit layer 191 and the dielectric layer 192.The second redistribution layer 193 is disposed on the back side surface110 b and the TSV 130 and electrically connected to the TSV 130. Thebump 194 is disposed on a side of the second redistribution layer 193opposite to the substrate 110.

Specifically, the circuit layer 191 is disposed in the dielectric layer192 and electrically connected to the TSV 130, and the line pitch of thecircuit layer 191 is greater than 1 μm. Embodiments of this disclosureare not limited thereto. The person having ordinary skill in the art canmake proper modifications to the circuit layer 191 depending on theactual application.

In addition, at least one solder ball 195 may be formed on a side of thebump 194 opposite to the second redistribution layer 193.

As shown in FIG. 14, and FIG. 15, in some other embodiments, thesemiconductor device 120 can be formed on the substrate 110 before thetrench 110 t 1 is formed in the substrate 110.

As shown in FIG. 17, in some other embodiments, the back side of thesubstrate 110 may be grinded, such that the shield structure 140 isexposed by the back side surface 110 b as well. Then, some otherelectrical connection structure, which is electrically isolated from theTSV 130, may be formed on the back side surface 110 b to be electricalconnected to the shield structure 140.

Because the distances between the TSVs 130 are not very large, somecrosstalk between the currents in the TSVs 130 may happen. In order toprevent the crosstalk between the currents in the TSVs 130, the shieldstructure 140 surrounds the TSV 130, such that the shielding effect willprotect the currents in the TSVs 130 from being influenced by theelectric fields and the magnetic fields generated by other currents inthe TSVs 130.

Further, because the shield structure 140 will be electrically connecteda power terminal or a ground terminal, the voltage of the shieldstructure 140 can maintain unchanged (in most case, the voltage will bezero). Therefore, the shield structure 140 can effectively perform theshielding effect.

All the features disclosed in this specification (including anyaccompanying claims, abstract, and drawings) may be replaced byalternative features serving the same, equivalent or similar purpose,unless expressly stated otherwise. Thus, unless expressly statedotherwise, each feature disclosed is one example only of a genericseries of equivalent or similar features.

Any element in a claim that does not explicitly state “means for”performing a specified function, or “step for” performing a specificfunction, is not to be interpreted as a “means” or “step” clause asspecified in 35 U.S.C. § 112, 6th paragraph. In particular, the use of“step of” in the claims herein is not intended to invoke the provisionsof 35 U.S.C. § 112, 6th paragraph.

What is claimed is:
 1. A semiconductor structure, comprising: asubstrate having a front side surface and a back side surface; at leastone semiconductor device disposed on the front side surface; athrough-substrate via (TSV) disposed in the substrate, wherein the TSVis exposed by the front side surface and the back side surface, and theTSV is electrically connected to the semiconductor device; a shieldstructure disposed in the substrate and surrounding the TSV, wherein theshield structure is exposed by the front side surface, the shieldstructure is electrically isolated from the TSV, and the shieldstructure and the TSV having bottom ends at different heights; and afirst dielectric layer covering a side surface and a bottom surface ofthe shield structure, wherein the back side surface of the substrate islower than a bottom surface of the first dielectric layer.
 2. Thesemiconductor structure of claim 1, further comprising: a seconddielectric layer disposed on the front side surface; a first circuitlayer disposed in the second dielectric layer, wherein the first circuitlayer is electrically connected to the TSV; and a second circuit layerdisposed in the second dielectric layer, wherein the second circuitlayer is electrically connected to the shield structure.
 3. Thesemiconductor structure of claim 2, further comprising: a first padelectrically connected to the first circuit layer; and a second padelectrically connected to the second circuit layer.
 4. The semiconductorstructure of claim 2, wherein the second dielectric layer, the firstcircuit layer, the second circuit layer, and the semiconductor deviceform a first redistribution layer.
 5. The semiconductor structure ofclaim 2, wherein the shield structure has a connecting portionelectrically connecting the second circuit layer.
 6. The semiconductorstructure of claim 1, wherein the shield structure is covered by theback side surface.
 7. The semiconductor structure of claim 1, wherein aheight of the TSV is greater than a height of the shield structure. 8.The semiconductor structure of claim 1, wherein the shield structure isa metal layer.
 9. The semiconductor structure of claim 1, furthercomprising: a second redistribution layer disposed on the back sidesurface and electrically connected to the TSV.
 10. The semiconductorstructure of claim 9, further comprising: a bump disposed on a side ofthe second redistribution layer opposite to the substrate.
 11. Thesemiconductor structure of claim 9, wherein the second redistributionlayer comprises: a third dielectric layer; and a third circuit layerdisposed in the third dielectric layer and electrically connected to theTSV.
 12. The semiconductor structure of claim 1, wherein the substrateis substantially absent between the TSV and the shield structure. 13.The semiconductor structure of claim 1, wherein a part of the substrateis disposed between the TSV and the shield structure.
 14. Thesemiconductor structure of claim 1, wherein the TSV is made of copper.15. The semiconductor structure of claim 1, wherein the TSV and theshield structure are made of a same material.